序号

论文名称

期刊

第一作者

发表年份

1

Stages in the catalyst-free InP nanowire growthon silicon (100) by metal organic chemical vapor deposition

Nanoscale Research Letters

Guoqing Miao

2012

2

Effects of compositional overshoot on InP based InAlAs metamorphic graded buffer

J. Infrared Millim. Waves

Fang Xiang

2012

3

MOCVD自催化法在Si(100)衬底上生长InP InGaAs核壳结构纳米线

发光学报

张登巍

2012

4

InGaAs nanoflowers grown by MOCVD

Advanced Materials Research

Tiemin Zhang

2012

5

Response Spectrum 0.9-2.65 μm of In_0.82Ga_0.18As Detectors by Two-step Growth Technique

Advanced Materials Research

Tiemin Zhang

2012

6

InP-based In_xGa_1-xAs metamorphic buffers with different mismatch grading rates

半导体学报

Fang Xiang

2013

7

Effect of Substrate Orientation and PH3 Thermal Annealing Treatment on Catalyst-Free InP Nanowires

Advanced Materials Research

Guoqing Miao

2013

8

红外探测器倒装互连技术进展

红外与激光工程

耿红艳

2013

序号

专利名称

第一作者

发表年份

1

包含超晶格隔离层的大晶格失配外延材料缓冲层结构及其制备(授权)

顾溢

2012

2

一种采用LP-MOCVD系统生长低位错密度高铟组分铟镓砷材料的方法（受理）

曾玉刚

2013

3

一种降低InP基InGaAs异变材料表面粗糙度的方法（受理）

顾溢

2013

4

石墨烯增强型InGaAs红外探测器（受理）

张志伟

2013

5

宽探测波段的InGaAs/GaAs红外探测器（受理）

张志伟

2013

序号

论文名称

期刊

第一作者

发表年份

1

InAlAs graded metamorphic buffer with digital alloy intermediate layers

Jpn.J. Appl. Phys.

Yi Gu

2012

2

Fourier transform infrared spectroscopy approach for measurements of photoluminescence and electroluminescence in mid-infrared

Rev. Sci. Instrum.

Y. G. Zhang

2012

3

An effective TDLS setup using homemade driving modules for evaluation of pulsed QCL

Appl. Phys.B

Y.G. Zhang

2012

4

Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE

J. Infrared Millim. Waves

Wang Kai

2012

5

Al(Ga)InP-GaAs photodiodes tailored for specific wavelength range

Book capter in《Photodiode-from Fundamantals to Applications》

Zhang Yonggang

2012

6

Emission Spectroscopy in the

Mid-infrared using FTIR

Spectrometry

Book capter in《The Wonder of Nanotechnology》Book chapter02

Yong-gang Zhang

2013

7

TEM dislocations characterization of In_xGa_1−xAs/InP(100)(x=0.82) on mismatched InP substrate

Materials Letters

L. Zhao

2013

8

Absorption coefficients of In_0.8Ga_0.2As at room temperature and 77 K

J. Alloys and Compounds

L. Zhou

2013

9

2.7μm InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers

Appl. Phys. Lett.

Y. Y. Cao

2013

10

InAs/In_0.83Al_0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm

Appl. Phys. Lett.

Y. Gu

2013

11

Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to1.4mm

J. Crystal Growth

L. Zhou

2013

12

Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors

J. Crystal Growth

Y. Gu

2013

13

InAs/InGaAs digital alloy strain-compensated quantum well lasers

J. Infrared Millim. Waves

CAO Yuan-Ying

2013

14

“Fabrication of column shape two dimensional photonic crystals by holographic lithography using double developments

J. Infrared Millim. Waves

Yuanying Cao

2013

15

Analysis and evaluation of uniformity of SWIR InGaAs FPA―Part II: processing issues and overall effects

Infrared Physics & Technology

LI Cheng

2013

16

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

Chin. Phys. B

Gu Yi

2013

序号

专利名称

第一作者

发表年份

1

基于数字合金的非矩形量子结构及其实现方法（授权）

张永刚

2012

2

精确控制四元系半导体直接带隙材料组分的生长与表征方法（授权）

顾溢

2012

3

一种改善半导体材料光致发光测试效果的方法（授权）

张永刚

2012

4

一种采用双调制提高光荧光测试灵敏度的方法（授权）

张永刚

2012

5

一种包含赝衬底的InP基应变量子阱结构及制备方法（授权）

顾溢

2012

6

一种光伏探测材料缺陷与器件性能关联性的系统表征方法（受理）

张永刚

2012

7

一种十纳米量级尺寸及误差光学检测方法（受理）

张永刚

2012

8

一种脉冲激光器驱动装置（授权）

张永刚

2013

9

用于拓展In_0.53Ga_0.47As探测器及其阵列短波响应的材料体系及其制备（授权）

顾溢

2013

10

一种微型宽脉冲范围双波长光感基因刺激装置（授权）

张永刚

2013

11

一种GaAs衬底上扩展波长InGaAs探测器结构（受理）

陈星佑

2013

12

基于免等离子工艺降低暗电流的光电探测器芯片制作方法（受理）

张永刚

2013

13

利用电子阻挡层降低暗电流的InGaAs探测器及制备（受理）

顾溢

2013

14

用于雪崩光电二极管的能带递变倍增区结构及其制备方法（授权）

顾溢,

2013

序号

论文名称

期刊

第一作者

发表年份

1

Multiple Surface Plasmon Resonances in Compound Structure with Metallic Nanoparticle and Nanohole Arrays

Plasmonics

Lina Wang

2012

2

Performance of Low Dark Current InGaAs Shortwave Infrared Detector

Pro.SPIE

Tao Li

2012

3

Damage buildup and annealing characteristics in Be-implanted InAs_0.93Sb_0.07film

Nucl. Instr. and Meth. in Phys. Res. B

Q.W. Wang

2012

4

Sensitive refractive index sensing with good operation angle-polarization-tolerance using plasmonic split-ring resonators array with broken symmetry

J. Phys. D-Appl

Jietao Liu

2013

5

A High sensitivity index sensor based on magnetic plasmon resonance in metallic grating with very narrow slits

Chin. Phys. Lett

Xu binzong

2013

6

Slow surface plasmons in plasmonic grating waveguide

IEEE Photonics Technology Letters

Yun Xu

2013

7

Absorption enhancement of In_0.53Ga_0.47As photodetector with rear plasmonic nanostructure

Pro. SPIE

Binzong Xu

2013

8

Terahertz Light Deflection in Doped Semiconductor Slit Arrays

Optics Communications

Binzong Xu

2013

9

Tunable coupling-induced transparency band due to coupled localized electric resonance and quasiguided photonic mode in hybrid plasmonic system

Opt. Express

Jietao Liu

2013

10

The Generation of compact azimuthally polarized vertical-cavity surface emitting laser beam with radial slits

Chin. Phys. Lett

Xu binzong

2013

11

Two-band finite difference method for the bandstructure calculation

with nonparabolicity effects in quantum cascade lasers

Journal of Applied Physics

Xunpeng Ma

2013

序号

专利名称

第一作者

发表年份

1

一种全自动控制的液相外延设备及控制方法

邱锋

2012

2

一种用于超薄外延层生长的液相外延石墨舟及其生长方法

邱锋

2012

3

一种用于液相外延用富镓的砷化镓熔体凝固的方法

邱锋

2012

4

低阻p-GaN欧姆接触电极制备方法（授权）

林梦喆

2012

5

基于微小孔激光器的扫描近场光学显微镜系统（授权）

宋国峰

2012

6

测量半导体激光器腔面温度的测试系统（授权）

裘利平

2012

7

具有梯度带隙势垒吸收层的光泵浦垂直外腔面发射激光器（授权）

黄祖炎

2012

8

半导体激光器腔面温度的测量方法（授权）

饶岚

2012

9

HPT结构的InAsGaSb超晶格红外光电探测器

张宇

2012

10

亚波长自聚焦的径向偏振垂直腔

面发射激光器及制备方法

宋国峰

2012

11

一种周期阵列的局域等离子体共振传感器

宋国峰

2013

12

一种局域表面等离子体和波导模式耦合的结构

宋国峰

2013

13

一种双色量子阱红外光探测器

许斌宗

2013

14

可调谐有源滤波器

陈良惠

2013

15

大面积表面增强拉曼活性基底的倾斜生长制备方法

韦欣

2013

序号

论文名称

期刊

第一作者

发表年份

1

Noise characteristics of short wavelength infrared InGaAs linear focal plane arrays

Journal of Applied Physics

Xue Li

2012

2

The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

Chinese Physics Letters

CHANG Jian-Guang

2012

3

高迁移率InGaAs/InP量子阱中的有效g因子

物理学报

魏来明

2012

4

Front-illuminated planar type InGaAs sub-pixels infrared detector

Pro. SPIE

Honghai Deng

2012

5

Contact property of Ni(Ti)PtAu on p-In_0.52Al_0.48As

Pro. SPIE

P.Wei

2012

6

Temperature stability of thin-film filtering microstructure on InP substrates

Pro. SPIE

Yunji Wang

2012

7

Research on ICP Etching Technology of InGaAs Based on Orthogonal Experimental Design

Pro. SPIE

Bo Yang

2012

8

The effective g-factor in In_0.53Ga_0.47As/In_0.52Al_0.48As quantum well investigated by magnetotransport measurement

Journal of Applied Physics

X. Z. Liu

2013

9

Effect of γ irradiation on the performance of InGaAs infrared detectors

Pro. SPIE

Xing Huang

2013

10

Characterization of Single Photon Avalanche Diodes Fabricated By 0.13 um CMOS Technology

Pro. SPIE

Jiayu Guo

2013

11

The physical mechanisms of IG Random Telegraph Noise in deeply scaled pMOSFETs

IEEE the International Reliability Physics Symposium

X. Ji

2013

12

航天先进红外探测器组件技术及应用

红外与激光工程

龚海梅

2013

13

ICP刻蚀InGaAs的微观损伤机制研究

红外与激光工程

程吉凤

2013

14

The promising multi-bit/level programming operations for nano-scaled SONOS memory

Microelectronics Reliability

Xiaoli Ji

2013

15

Research of extended-wavelength 64x64 In_0.83Ga_0.17As focal plane arrays

Pro. SPIE

Ming Shi

2013

16

Surface passivation of In_0.83Ga_0.17As photodiode with high-quality SiN layer fabricated by ICPCVD at the lower temperature

Infrared Physics & Technology

Peng Wei

2013

17

背照射波长延伸InGaAs面阵焦平面探测器

红外与毫米波学报

魏鹏

2013

18

Dark Current Characterization and Simulation for In_0.78Ga_0.22As PIN Photodetectors

Pro. SPIE

Baiqing Liu

2013

19

Study on dark current of extended wavelength InGaAs detectors

Pro. SPIE

Xue Li

2013

序号

专利名称

第一作者

发表年份

1

一种平面型子像元结构铟镓砷红外探测器芯片

邓洪海

2012

2

一种平面型子像元结构铟镓砷红外探测器芯片制备方法

邓洪海

2012

3

一种集成滤光微结构的InGaAs线列或面阵探测器（授权）

李雪

2012

4

一种应用于线列红外焦平面探测器的高稳定性倒焊基板（授权）

李雪

2012

5

一种消除InAs单晶表面电荷积累层的热处理方法（受理）

邓惠勇

2013

6

一种光谱平坦的探测器用吸收层及其制备方法

马学亮

2013